Title:
金属ヒューズ、アンチヒューズ及び/又は抵抗器を含む金属ゲート統合構造体及び方法
Document Type and Number:
Japanese Patent JP2011523507
Kind Code:
A
Abstract:
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.
Inventors:
Eshun, Evenizer, Yi
F, John Shan
Russell, Robert, M
Cool bow, douglas
Gebrechlassie, Effrem, Gee
One, Pinchuwan
Kim, Deo Key
Kosanda Raman, Chandra Sekaran
Robson, Norman, W
Moi, Dan
Saffron, John, M
Stein, Kenneth, Jay
Ho, Herbert, El
Yang, Hong Wen
F, John Shan
Russell, Robert, M
Cool bow, douglas
Gebrechlassie, Effrem, Gee
One, Pinchuwan
Kim, Deo Key
Kosanda Raman, Chandra Sekaran
Robson, Norman, W
Moi, Dan
Saffron, John, M
Stein, Kenneth, Jay
Ho, Herbert, El
Yang, Hong Wen
Application Number:
JP2011509538A
Publication Date:
August 11, 2011
Filing Date:
April 28, 2009
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L27/06; H01L21/3205; H01L21/82; H01L21/822; H01L21/8234; H01L23/52; H01L27/04; H01L29/786
Domestic Patent References:
| JP2007150234A | 2007-06-14 | |||
| JP2008071925A | 2008-03-27 | |||
| JP2001351877A | 2001-12-21 | |||
| JPH06342883A | 1994-12-13 | |||
| JPH0332055A | 1991-02-12 | |||
| JP2006527915A | 2006-12-07 | |||
| JP2007184584A | 2007-07-19 |
Foreign References:
| US20070221966A1 | 2007-09-27 |
Other References:
JPN6014014683; Ｙａｏ-Ｔｓｕｎｇ Ｈｕａｎｇ ｅｔ ａｌ．: 'ＰＭＯＳＦＥＴ Ｒｅｌｉａｂｉｌｉｔｙ Ｓｔｕｄｙ ｆｏｒ Ｄｉｒｅｃｔ Ｓｉｌｉｃｏｎ Ｂｏｎｄ（ＤＳＢ） Ｈｙｂｒｉｄ Ｏｒｉｅｎｔａｔｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ（ＨＯＴ）' ＩＥＥＥ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥ ＬＥＴＴＥＲＳ Ｖｏｌ．２８， Ｎｏ．９, 200709, ｐ．８１５-８１７
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City