To provide a method of growing a semiconductor crystal, which make a crystallization rate or a doping concentration nearly constant at any position in a diameter direction, and also to provide an apparatus for manufacturing the semiconductor crystal.
Parts strongly and weakly influenced by the heat of an induction heating means 54, or strong and weak parts of flow of a reaction gas are localizedly provided in a limited space S so as to be offset from the center of the limited space S, and a substrate is revolved in such an environment so as to average the growing rate of a crystal in the substrate and the doping concentration thereof as a whole. More specifically, a gas inlet port 72a is located at a position close to the side surface of a wall, and a gas outlet port 72d is located in the vicinity of the other side of the wall opposed to the inlet port. Or film formation is carried out in use of an apparatus located at such a position that the center of the induction heating means 54 is shifted from the center of susceptor and from the center of a radiating member 56.
COPYRIGHT: (C)2007,JPO&INPIT
| WO/2001/045150 | PRESSURE CONTROL METHOD |
| WO/2023/190449 | VENTED PLUG AND MOUNTING BASE |
| JPS63129611 | VAPOR-PHASE GROWTH PROCESS |
TSUCHIDA SHUICHI
| JPH0669133A | 1994-03-11 | |||
| JPH02118758A | 1990-05-07 |
Koji Makimura
Toru Suzuki
Yoshiko Yamoto
Next Patent: TAPE-LIKE WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE