To provide a method of manufacturing an accurate semiconductor package which can reduce a cost by increasing a manufacturing efficiency and a yield, and can achieve high-level and more functions by making the package compact and thin, and manufacturing the package with a high density.
A device substrate member 2 having a device 4 and an electrode 10 formed on a semiconductor substrate 3 is integrally formed with a rewiring layer substrate member 5 having a rewiring layer 7 formed on a light-transmitting dummy substrate 6 with a release film 24 disposed therebetween. Thereafter, the release layer 24 is heated by irradiating the resultant structure with a laser beam from the side of the dummy substrate 6 to release the dummy substrate 6 with the release layer 24 as an interface.
COPYRIGHT: (C)2007,JPO&INPIT
OGAWA TAKESHI
MIYAZAKI HIROHITO
TAKESHIMA NAMIKO
JP2002076576A | 2002-03-15 | |||
JP2006019425A | 2006-01-19 |
WO2005036632A1 | 2005-04-21 | |||
WO2003007379A1 | 2003-01-23 |
Eiichi Tamura
Seiji Iga