Title:
METHOD AND APPARATUS FOR TREATING WAFER
Document Type and Number:
Japanese Patent JPS61290724
Kind Code:
A
Abstract:
PURPOSE:To continuously anneal wafers without washing them, by irradiating the wafers with short-wavelength ultraviolet rays for producing ozone and removing the resist on the wafers. CONSTITUTION:A wafer 16 is moved from a cassette loader 15 located on the upstream side of an ultraviolet irradiation section to a belt conveyer 13 with the wafer surface on which a resist is to be adhered directed upwards and is further transferred onto a carrying table 6. The wafer 16 is heated to a predetermined temperature from its rear face by a plate heater 5, while it is irradiated with ultraviolet rays by a ultraviolet lamp 7 from the upside. Simultaneously, the ultraviolet treatment section 12 is continuously supplied with oxygen gas by a gas supply section. The wafers 16 are advanced by a conveyer means by one pitch and moved sequentially to the right-hand direction. The resist on the wafer 16 is completely removed during this movement. The wafers 16 are than introduced through a gate 11 into a buffer section, where they are purged of oxygen. The wafers 16 are transferred to an annealing section, where they are annealed by heating the same with the plate heater 5.
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Inventors:
CHIKAOKA RYOSAKU
MAEJIMA HIROSHI
WAKIYAMA FUMITOSHI
HANAJIMA SHUICHI
OOSAKAYA TAKAYOSHI
MAEJIMA HIROSHI
WAKIYAMA FUMITOSHI
HANAJIMA SHUICHI
OOSAKAYA TAKAYOSHI
Application Number:
JP13188085A
Publication Date:
December 20, 1986
Filing Date:
June 19, 1985
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01L21/3065; H01L21/311; (IPC1-7): H01L21/26; H01L21/302; H01L21/324
Attorney, Agent or Firm:
Katsuo Ogawa