To provide a method for depositing multilayered metallic films by evaporation which improves an yield by preventing the direct contact of a metallic mask to metallic thin film patterns.

The metallic thin film patterns 2 are formed by using photoresist patterns 3 on a substrate 1 and these photoresist patterns 3 are used as protective films for protecting the metallic thin film patterns at the time of installing a metallic mask 4 after the formation of the metallic thin film patterns 2 in this method for evaporating the multilayered metallic films by evaporation. As a result, the multilayered metallic films 7 are deposited by evaporation to the metallic thin film patterns from the parts 5 for depositing the multilayered metallic films by evaporation possessed by the metallic mask by preventing the direct contact of the metallic thin film patterns to the metallic mask.