Title:
自己整合コンタクトを形成する方法およびデバイス構造体
Document Type and Number:
Japanese Patent JP7157134
Kind Code:
B2
Abstract:
Techniques for forming self-aligned contacts by forming gate sidewall spacers and gates before forming the contacts are provided. In one aspect, a method of forming self-aligned contacts includes the steps of: forming multiple gate sidewall spacers on a substrate; burying the gate sidewall spacers in a dielectric; forming gate trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which gates will be formed; forming the gates in the gate trenches; forming contact trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which the self-aligned contacts will be formed; and forming the self-aligned contacts in the contact trenches. A device structure having self-aligned contacts is also provided.
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Inventors:
Fan, suchen
Planata Siharan, Ballas Bramanian
Green, Andrew
Cie, Louis Ron
Raymond, Mark, Victor
Lian, cyan
Planata Siharan, Ballas Bramanian
Green, Andrew
Cie, Louis Ron
Raymond, Mark, Victor
Lian, cyan
Application Number:
JP2020502130A
Publication Date:
October 19, 2022
Filing Date:
July 16, 2018
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/336; H01L21/28; H01L29/417; H01L29/423; H01L29/49; H01L29/78; H01L29/786
Domestic Patent References:
| JP2004152790A | ||||
| JP2001291867A | ||||
| JP2002170953A | ||||
| JP2001267561A | ||||
| JP2009130035A |
Foreign References:
| US9520482 | ||||
| US20010055842 | ||||
| CN1319881A | ||||
| US20160365424 | ||||
| US20020068394 | ||||
| KR20020043444A |
Attorney, Agent or Firm:
Tadashi Taneichi