Title:
METHOD FOR EVALUATION OF QUALITY OF POLYCRYSTALLINE SILICON GROWTH FILM
Document Type and Number:
Japanese Patent JPS59211234
Kind Code:
A
Abstract:
PURPOSE:To facilitate to prepare a sample for measurement of a grain size by selectively etching a mirror-finished bevel plane to make the grains of the polycrystalline Si actualized. CONSTITUTION:A polycrystalline Si layer 2 present on a semiconductor wafer 1 is beveled on a glass plate such as pyrex subjected to a honing process without using an abrasive grain while being soaked in the water, and the beveled plane 3 is mirror-finished. The mirror-finished bevel plane 3 is etched with a selective light etching solution to make the shapes of the grains actualized by a difference of a grain boundary of the polycrystalline Si and an etching rate of the grains. It is easy to measure the sizes of the grains by observation, e.g. with SEM and to evaluate quality of the polycrystalline Si film.
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Inventors:
YAMAGUCHI TADAKATSU
Application Number:
JP8615483A
Publication Date:
November 30, 1984
Filing Date:
May 17, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Uchihara Shin