To provide a method of fabricating a semiconductor device, by which a dicing line can be determined from the backside of a wafer to dice a thinned and semi-finished wafer.

The method of fabricating the semiconductor device includes steps of: forming front-side electrodes (8a, 8b, 8c...) onto a surface 2b of the wafer 2; measuring the position of the front-side electrode by transparent type measurement instrument 14 after a rib 6 is formed on the backside 2a of the wafer; and forming a groove 12 along the position in which the grid line that partitions the front-side electrode passes through the backside 6a of the rib 6. If the groove 12 has a width two times as large as the thickness of the back electrode to be formed afterward, the position of the groove can be measured with a CCD camera after the back electrode is formed, thereby determining the dicing line.