METHOD FOR FLATTENING WAFER BY ETCHING AND WAVER FLATTENING DEVICE

Title:

METHOD FOR FLATTENING WAFER BY ETCHING AND WAVER FLATTENING DEVICE

Document Type and Number:

Japanese Patent JPH09232279

Kind Code:

A

Abstract:

To flatten a wafer without problems such as warp or contamination of the wafer face, or abrasion of the surface plate, large-size or complexity, instability of an abrasive pad or the like.

In this method, first a thickness distribution of a wafer 3 is measured, and next a photomask 2 is prepared from the thickness distribution data, and the wafer 3 in an etchant 9 is exposed to lights through this photomask 2, whereby the wafer 3 is etched as a temperature distribution in response to the thickness distribution. This device comprises: a light source 1 for exposing the wafer to lights; the photomask 2 for absorbing and intercepting beams irradiated from the light source 1; a wafer holder 4 for holding the wafer 3 in the etchant 9; and an etching bath 5 for flatting the wafer 3 by etching.

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Inventors:

HASEGAWA FUMIHIKO
TANAKA KOICHI
MITSUSAKA HITOSHI
KOBAYASHI MAKOTO

Application Number:

JP6378796A

Publication Date:

September 05, 1997

Filing Date:

February 26, 1996

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK

International Classes:

H01L21/306; (IPC1-7): H01L21/306

Attorney, Agent or Firm:

Mikio Yoshimiya

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