METHOD FOR FORMING FILM OF OXIDE ON METAL SUBSTRATE BY HERATY PLASMA EVAPORATION METHOD

Japanese Patent JP2829221

B2

PURPOSE: To suppress a reaction substance between a plasma and a substrate metal by forming a film of a ceramic intermediate film at a specific substrate temperature as a diffusion preventing film on the metal substrate and forming a film of an oxide superconductor on the ceramic intermediate film.
CONSTITUTION: A film of a ceramic intermediate layer 42 such as YSZ to prevent mutual diffusion of a substrate component and an oxide superconductor is formed by heat plasma evaporation method on a metal substrate consisting of a nickel group allay or SUS, as a single crystal metal substrate or a polycrystal metal substrate by raising the metal substrate temperature from 350°C, in an inert atmosphere formed by supplying argon having low oxygen concentration of ≤10vol.% and maintaining at $ 600C and a thin film 44 of an oxide superconductor such as YBa2Cu3O7-x is formed on the film to give a high-temperature superconductor 40 having the film of the ceramic intermediate layer 42 made only of oxide ceramic on the smooth metal substrate having no reaction phase both on the metal substrate 30 and the intermediate layer 42.

TATSUMI NORYUKI
TSUJINO JIRO
KUME ATSUSHI
SHIOBARA TOORU
TANAKA SHOJI
SUKETANI SHIGENORI
KIKUCHI HIROSHI

JP16246593A

November 25, 1998

June 30, 1993

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KOKUSAI CHODENDO SANGYO GIJUTSU KENKYU SENTAA
HOTSUKAIDO DENRYOKU KK
FUJIKURA KK
MITSUBISHI DENSEN KOGYO KK
TOKYO GASU KK
HITACHI DENSEN KK

B01J19/08; C01B13/14; C01G1/00; C01G3/00; C23C4/02; C23C4/10; C30B29/22; H01B12/00; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C30B29/22; C01G1/00; C01G3/00; H01B12/00; H01L39/24

JP652742A
JP5213699A
JP1305580A

Watanabe Noboru Minoru

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