PURPOSE: To shorten the exposure time by a method wherein the step of forming T type metallic electrode is changed from electron beam lithography to photolithography.

CONSTITUTION: The first photoresist layer 2 and an intermediate layer 3 insensitive to g beams but sensitive to i line, the second photoresist layer 4 sensitive to the g beams are formed on a semiconductor substrate 1; the first aperture part 5 is formed in the second photoresist layer 4 by exposure and development using g line stepper; and then the intermediate layer 3 in the first aperture part 5 is selectively removed to form the second aperture part 6 in the first photoresist layer 2 by the exposure and development using i beam stepper. Later, a recess part 7 is formed, a metallic layer 8 is deposited, the second photoresist layer 4, the intermediate layer 3 and the first photoresist layer 2 are removed to firm a T type metallic electrode 8A.