Title:
METHOD FOR FORMING PATTERN OF COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH0536654
Kind Code:
A
Abstract:
PURPOSE: To form a grating pattern on the surface of a semiconductor workpiece without contamination in a short time.
CONSTITUTION: The part irradiated with laser interference light 104 on, the surface of a compound semiconductor substrate 101 is selectively etched by simultaneously bringing an etching gas 103 into contact with the surface of the substrate 101 and irradiating the part with the light which is adjusted so that a prescribed grating pattern can be formed on the surface of the semiconductor.
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Inventors:
SUGIMOTO YOSHIMASA
Application Number:
JP21285691A
Publication Date:
February 12, 1993
Filing Date:
July 30, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/20; H01L21/268; H01L21/302; (IPC1-7): H01L21/20; H01L21/268; H01L21/302
Attorney, Agent or Firm:
Sugano Naka
Next Patent: METHOD FOR WORKING COMPOUND SEMICONDUCTOR