To provide a method of growing a crystal capable of preventing bubbles from being mixed into the crystal to a higher level.

A method of growing a crystal includes a degassing process in which after a melting process in which a solid raw material is melted to manufacture a molten raw material, prior to a crystal growth process in which a crystal is grown, decompression is performed up to a pressure in which no molten raw material bumps or temperature is increased up to the temperature in which no bumping occurs, and the bubble mixed into the molten raw material is made to emit therefrom. An attainment pressure by the decompression is preferably 5 to 20 Torr. The molten raw material may be supplied to a crucible for crystal growth under a pre-melted state. The degassing process may be performed before the molten raw material is supplied to the crucible for crystal growth. In the degassing process, the molten raw material may be agitated. In this case, the agitation may be performed by a quartz rod provided so as to be freely advanced/retracted against a liquid level of the new material at the upper part of the crucible accommodating the molten raw material.