METHOD OF GROWING THIN FILM CRYSTAL

Japanese Patent JPH01305895

A

PURPOSE:To supply a molecular beam in the state of additionally increasing the purity of a raw material in, for example, a molecular beam epitaxy method by putting the raw material which is the molecular beam source into a container internally having projections and subjecting the same to specific adjustment to generate the molecular beam. CONSTITUTION:The projections 2 are provided in the container 1 for containing the raw material 21 to generate the molecular beam and heating mechanisms of heaters 3a, 3b, 3c are provided thereto in such a manner that a negative temp. gradient is attained from the bottom toward the aperture. The material 21 is put into the container 1 and is placed in ultra-high vacuum and microgravity environment. The heaters 3a, 3b, 3c are so set that a low temp., middle temp. and high temp. are respectively attained in this order and that all the temps. are at or higher than the m. p. of the material 21. The impurities 22, 22' in the materials 21, 21' are thus made to exist and distribute more in the high temp. region. The temp. is then controlled to the temp. lower than the m. p. of the materials 21, 21' and the material is solidified; thereafter, the molecular beam is taken out. The emission of the molecular beam through the aperture from the region where there are the many impurities 22 ' in the bottom of the container is prevented by the projections 2 in the container 1.

KARASAWA TAKESHI
OKAWA KAZUHIRO
MITSUYU TSUNEO

JP13783488A

December 11, 1989

June 03, 1988

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MATSUSHITA ELECTRIC IND CO LTD

C30B23/08; H01L21/203; (IPC1-7): C30B23/08; H01L21/203

Toshio Nakao (1 outside)

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