To suitably form a conductive film pattern having a structure in which a transparent conductive film formed of metal oxide containing indium is laminated on a metal film formed of aluminum or aluminum alloy.
The transparent conductive film 40 is etched by using a water solution containing hydrofluoric acid, and an etched side surface 43 is side-etched to retreat under a resist film 50. Then, a liquid reservoir 71 is formed in a region formed by a lower surface 52 of the resist film 50, the etched side surface 43, an etched side surface 33, and an etched bottom surface 32 of the metal film 30 by etching with a second etchant 70. As the etched bottom surface 32 retreats downward, the etched side surface 43 of the transparent conductive film 40 and the etched side surface 33 of the metal film 30 retreat as shown by lines P1→P2→P3. Therefore, a flush surface formed of the etched side surface 43 and the etched side surface 33 which continue to each other, or a shape in which the etched side surface 43 retreats is formed.
Kobayashi Kunito
Koji Kawabata
Koichi Kimura
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