To provide a method for making an exposure mask which enables transfer formation of a real pattern with high dimensional accuracy with respect to the design pattern onto a wafer by proximity effect correction considering the loading effect arisen in a dry etching process for making an exposure mask.

A test transfer pattern is formed on a wafer by using a test exposure mask having a mask pattern with varied pattern area rates in the peripheral region so as to obtain the proximity correction data for each pattern area rate based on the transfer patterns (ST5, ST6). The pattern area rate in the peripheral region around the correction cell including the respective pattern as the objective of correction is measured based on the design data for forming the real pattern (ST1 to ST3). The drawing data with a corrected design pattern in each correction cell is produced based on the pattern area rate in the peripheral region around each correction cell and on the proximity correction data obtained for each pattern area rate (ST7, ST8).