To provide a method for manufacturing a light emitting element which can form an electrode with good wire bondability.

In the method for manufacturing the light emitting element, at least, a layer containing AuBe, a Ti layer, and an Au layer are formed as an ohmic electrode material in a surface of a p-type semiconductor crystal of a semiconductor crystal in which at least, an n-type semiconductor crystal, a light emitting layer, and the p-type semiconductor crystal which contains Ga or In and whose carrier concentration is 1×1017/cm3or more and 1×1019/cm3or less are formed in this order, and heat treatment is then performed to form an ohmic electrode, and the semiconductor crystal is then diced. After the Au layer is formed and before the heat treatment is performed, cleaning is performed by first sulfuric acid/hydrogen peroxide mixture cleaning solution, and after the heat treatment is performed, cleaning is performed by second sulfuric acid/hydrogen peroxide mixture cleaning solution.

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