Title:
窒化物結晶基板の製造方法、窒化物結晶基板および積層構造体
Document Type and Number:
Japanese Patent JP7467182
Kind Code:
B2
Abstract:
To obtain a nitride crystal substrate having excellent crystal quality.SOLUTION: A manufacturing method of a nitride crystal substrate using a vapor growth method has steps of: preparing a foundation structure comprising a single crystal of a group III nitride semiconductor containing manganese at least in a surface layer; epitaxially growing, on the foundation structure, a main growth layer comprising the single crystal of the group III nitride semiconductor having a lower manganese concentration than a manganese concentration of the surface layer of the foundation structure; and obtaining at least one self-supporting nitride crystal substrate from the main growth layer.SELECTED DRAWING: Figure 1
Inventors:
Takehiro Yoshida
Application Number:
JP2020047411A
Publication Date:
April 15, 2024
Filing Date:
March 18, 2020
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
C30B29/38; C23C16/34; C30B25/20; H01L21/205
Domestic Patent References:
| JP2019112266A | ||||
| JP2012511489A | ||||
| JP2016160151A | ||||
| JP2005206415A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana