To enable hybrid packaging of highly functional logic and ferroelectric memory without entailing the fluctuation in the characteristics of a semiconductor integrated circuit and the deterioration in the characteristics by providing a method for manufacture which is capable of forming an oxide film and more particularly the ferroelectric oxide film of the ferroelectric memory.
The results obtained by carrying out X-ray diffraction measurement while raising a substrate temperature within a gaseous mixture composed of H2 and N2 of 4% in H2 concentration relating to a PZST amorphous film subjected to RR sputtering at a substrate temperature of about 300°C are shown in Figure. It is shown that the peak of a perovskite phase is gradually stronger from about the point exceeding 300°C. The acute peak of perovskite is observed at ≥400°C. Namely, the perovskite film exhibiting ferroelectricity at a low temperature of ≤450°C is evidenced to be obtained by carrying out the heat treatment in a reducing atmosphere. Such technique is applied to the ferroelectric film formation of the ferroelectric memory.
HAYASHI YOSHIHIRO
SENNA TAMOTSU
ISOBE TETSUHIKO
NAITO KOHEI
