Title:
METHOD FOR MANUFACTURING POLYSILICON WAFER
Document Type and Number:
Japanese Patent JP2023157404
Kind Code:
A
Abstract:
To provide a method for manufacturing a polysilicon wafer capable of manufacturing polysilicon wafers with high reproducibility by reducing variation of a minute wafer shape even in different film formation devices and chambers.SOLUTION: A method for manufacturing a polysilicon wafer in which a polysilicon layer is deposited on a single crystal silicon substrate includes steps of: (1) depositing a first polysilicon layer on a single crystal silicon substrate at temperatures of 1000°C or lower by a CVD method; and (2) depositing a second polysilicon layer on the first polysilicon layer at temperatures higher than 1000°C by a CVD method. In the step (1), a value (%) of the in-plane film thickness distribution of the first polysilicon layer to be formed is controlled within a predetermined range, and the difference between the maximum value (%) and the minimum value (%) of the predetermined range is within 5.2 (%).SELECTED DRAWING: Figure 1
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Inventors:
ARAI YUJI
MORI YOSHIYUKI
MORI YOSHIYUKI
Application Number:
JP2022067299A
Publication Date:
October 26, 2023
Filing Date:
April 15, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
C01B33/03; C23C16/24; H01L21/205
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka