Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING REDUCED LEAK CURRENT REGIONS
Document Type and Number:
Japanese Patent JP3484330
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress the junction leak current at a lower part of the source, including the edges of a field oxide film, to improve the refresh characteristic of a semiconductor element by forming a first impurity region at the lower part of the source and a second impurity region at the lower part of the first region.
SOLUTION: A semiconductor substrate 31 is implanted with a second conductivity type impurity e.g. P to form a first leak current reducing region 51 at the lower part of a source 43b and further implanted with a second conductivity type impurity to form a second leak current reducing region 53 at the lower part of the first reducing region 51. Forming this film region 51 suppresses a junction leak current produced at the interface between a field ion layer 35 and source 43b at the edges of a field oxide 33 and leak current due to etching damage. The second leak current reducing region 53 is intended to suppress the junction leak current at the lower part of the source 43b and improve the refresh characteristic.
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Inventors:
Xu Yong Yu
Application Number:
JP29293097A
Publication Date:
January 06, 2004
Filing Date:
October 24, 1997
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L29/78; H01L21/203; H01L21/76; (IPC1-7): H01L29/78
Domestic Patent References:
| JP8162635A | ||||
| JP53300A | ||||
| JP8125011A | ||||
| JP5102477A |
Attorney, Agent or Firm:
Mikio Hatta (1 outside)