Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003100746
Kind Code:
A
Abstract:
To improve the reliability of a cap conductive film formed on a wiring.
Wet processing using cleaning liquid containing citric acid or cleaning liquid containing citric acid and ammonia, dry etching processing, and thermal processing or plasma processing is performed before forming a cap insulating film on the wiring. Wet processing using cleaning liquid containing hydrogen peroxide, CMP processing, dry etching processing, ultrasonic cleaning processing, and the plasma processing or the thermal processing is performed after forming the cap insulating film on the wiring.
Inventors:
SAITO TATSUYUKI
OHASHI TADASHI
IMAI TOSHINORI
NOGUCHI JUNJI
TAMARU TAKESHI
OHASHI TADASHI
IMAI TOSHINORI
NOGUCHI JUNJI
TAMARU TAKESHI
Application Number:
JP2001298316A
Publication Date:
April 04, 2003
Filing Date:
September 27, 2001
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L23/52; H01L21/3205; (IPC1-7): H01L21/3205
Attorney, Agent or Firm:
Yamato Tsutsui
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