To provide a method for manufacturing a semiconductor device capable of manufacturing a thin low resistance metallic film on the surface of a silicon layer in a source region and a drain region at the time of forming a field effect transistor in an MOS configuration, and increasing the operating efficiency of the transistor.

In a second annealing process and a temperature reducing process, a crystal core 10 is formed in a titanium silicide film 9 which is an amorphous film. In a third annealing process, at the time of carrying out heat treatment again at an annealing temperature which is 700°C or higher, a crystal is grown with the crystal core 10 formed in the first annealing process and the temperature reducing process as a center, and a low-resistance titanium silicide film 9 is formed as a low-resistance metal film.