Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELECTRONIC COMPONENT
Document Type and Number:
Japanese Patent JP2014236149
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor electronic components which can thin an Si substrate without breaking it and can reduce unevenness in thickness in a processing surface more than conventional.SOLUTION: A method for manufacturing semiconductor electronic components includes: a joint step for joining a joint surface 21 of a second Si substrate 2 to a joint surface 11 where a recessed part (cavity) 12 of a first Si substrate 1 is formed; a thermal oxidation step for forming an oxide film 23 by performing thermal oxidation of a back surface 22 of the second Si substrate facing the joint surface 21 of the second Si substrate 2; and a step removing the oxide film for removing the oxide film 23 by etching. By removing the oxide film 23 by etching, mechanical stress is not given to the Si substrates 1, 2, so that the Si substrates 1, 2 can be thinned without breaking them. Also, by using etching for the removal of the oxide film 23, unevenness in thickness in a processing surface of the second Si substrate 2 becomes ±1% or so and can be made smaller than conventional.
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Inventors:
KONISHI TAKAHIRO
Application Number:
JP2013117903A
Publication Date:
December 15, 2014
Filing Date:
June 04, 2013
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
H01L21/304; B81C1/00
Domestic Patent References:
| JP2011164057A | 2011-08-25 | |||
| JPH11111674A | 1999-04-23 |
Foreign References:
| WO2011149906A1 | 2011-12-01 |
Attorney, Agent or Firm:
Patent business corporation Kaede Patent Attorneys' Office
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