To provide a technique for forming an MOS structure having a small EOT without increasing an interface trap density.
A method for manufacturing a semiconductor substrate which comprises: a semiconductor crystal layer; an intermediate layer composed of an oxide, nitride, or oxynitride of a semiconductor crystal constituting the semiconductor crystal layer; and a first insulating layer composed of an oxide and in which the semiconductor crystal layer, the intermediate layer, and the first insulating layer are located in this order comprises the steps of: (a) forming a first insulating layer on an original semiconductor crystal layer; and (b) forming an intermediate layer by nitriding or oxidizing a part of the original semiconductor crystal layer or making a part of the original semiconductor crystal layer oxynitride by exposing a surface of the first insulating layer to nitrogen plasma and forming a semiconductor crystal layer which is a remainder of the original semiconductor crystal layer.
TAKAGI SHINICHI
HAN JAEHOON
TAKADA TOMOYUKI
OSADA TAKENORI
HATA MASAHIKO
UNIV TOKYO
Shigenori Hayashi
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