METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD USED THEREFOR

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD USED THEREFOR

Document Type and Number:

Japanese Patent JP2013153161

Kind Code:

A

Abstract:

To provide: a method of manufacturing a semiconductor substrate product taking advantage of high-speed and accurate etching (with defect suppressed) which never involves an alkali metal as an essential component and is achieved by a simple arrangement as far as possible; and an etching method therefor.

The method of manufacturing a semiconductor substrate product comprises the steps of: preparing an aqueous solution including 7 mass% or more and 25 mass% or less of quaternary alkylammonium hydroxide; preparing a semiconductor substrate having a silicon film composed of a polycrystalline silicon film or an amorphous silicon film; and etching at least a part of the silicon film of the semiconductor substrate while using the aqueous solution heated to a temperature of 80°C or higher.

Inventors:

ENOKIDO MASAFUMI
INABA TADASHI
MIZUTANI ATSUSHI

Application Number:

JP2012286106A

Publication Date:

August 08, 2013

Filing Date:

December 27, 2012

Export Citation:

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Assignee:

FUJIFILM CORP

International Classes:

H01L21/306; H01L21/8242; H01L27/108

Domestic Patent References:

JP2008085164A	2008-04-10
JP2010135591A	2010-06-17
JP2005191163A	2005-07-14
JP2005045285A	2005-02-17
JPH02251275A	1990-10-09
JP2007534145A	2007-11-22

Foreign References:

US20060046419A1

2006-03-02

Attorney, Agent or Firm:

Toshizo Iida
Naosuke Miyamae

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