To manufacture a highly reliable semiconductor device by imparting stabilized electrical characteristics to a transistor using an oxide semiconductor film.
In the semiconductor device having a reverse-stagger type transistor of bottom gate structure provided on a substrate having an insulation surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor layer. It is then subjected to heat treatment at 450°C or more, preferably, at 650°C or more thus forming an oxide semiconductor film. By performing heat treatment at 450°C or more, preferably, at 650°C or more before formation of the oxide semiconductor film, diffusion of a hydrogen element into the oxide semiconductor film, which is a factor of causing degradation or variation in the electrical characteristics of a transistor, can be reduced and stabilized electrical characteristics can be imparted to the transistor.
OKAZAKI KENICHI
HOSAKA HIROYASU
IKEYAMA TERUMASA
YAMAZAKI SHUNPEI
| JP2011029629A | 2011-02-10 | |||
| JP2011076080A | 2011-04-14 | |||
| JP2011142311A | 2011-07-21 | |||
| JP2011233880A | 2011-11-17 |