SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND PROGRAM

Japanese Patent JP2013153159

A

To easily remove by-products etc. remaining in an exhaust part.

A substrate processing apparatus includes: a processing chamber where a substrate is housed; a first gas supply part supplying a first process gas containing predetermined chemical elements to the substrate; a second gas supply part supplying a second process gas containing predetermined chemical elements and halogen to the substrate; an exhaust part exhausting air in the processing chamber; a cleaning gas bypass supply part supplying a cleaning gas to the exhaust part without passing the cleaning gas through the processing chamber; a cleaning monitoring part provided at the exhaust part and detecting the state of the exhaust part; and a control part controlling the cleaning gas supply conducted by the cleaning gas bypass supply part according to the state of the exhaust part detected by the cleaning monitoring part.

WO/2011/161975	EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD
JP6504770	Plasma processing equipment and plasma processing method

KOSHI YASUNOBU
SUZAKI KENICHI
YOSHINO AKIHITO

JP2012285311A

August 08, 2013

December 27, 2012

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HITACHI INT ELECTRIC INC

H01L21/205; C23C16/44; H01L21/3065

JP2004289098A	2004-10-14
JP2001284264A	2001-10-12
JPH07297127A	1995-11-10
JP2010109245A	2010-05-13
JP2006004962A	2006-01-05
JP2000223430A	2000-08-11
JPH11222680A	1999-08-17
JPH1187248A	1999-03-30

WO2006049225A1

2006-05-11

Toru Yui
Aniya Setsuo
Hitoshi Kiyono
Fukuoka Masahiro

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