Title:
METHOD OF MANUFACTURING THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP3479508
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor operated at high speeds without a complex process with good reproducibility.
SOLUTION: A semiconductor layer 13 having high resistance and a semiconductor layer 12 having low resistance are laminated on a substrate 11 having a pixel electrode 18 and are patterned in the shape of a transistor. Next, a metal film is formed thereon and is patterned to form a source electrode 50 and a drain electrode 51. Here, laser light whose irradiation cross section is shaped like a line is applied thereto to separate the semiconductor layer 12 having low resistance into source and drain connection portions and then laser light is applied to the semiconductor layer 13 having thigh resistance to increase the crystallinity of a channel region. Next, a gate insulating film 16 and a gate electrode 17 are formed to form a substrate in which thin film transistors 10 are aligned.
Inventors:
Mitsufumi Kodama
Mikio Kinka
Mikio Kinka
Application Number:
JP2000386272A
Publication Date:
December 15, 2003
Filing Date:
February 27, 1989
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/136; G02F1/1368; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Domestic Patent References:
| JP2224346A | ||||
| JP59195871A | ||||
| JP58127318A | ||||
| JP6325913A | ||||
| JP5568652A |
Attorney, Agent or Firm:
Kenzo Fukuda (3 others)