To provide a titanium (low valence)-doped zinc oxide-based transparent conductive film-forming material enabling film formation of the transparent conductive film having excellent conductivity and being suppressed in abnormal discharge at film formation.

The method for manufacturing the zinc oxide-based transparent conductive film-forming material uses a raw material powder containing a mixed powder of a low-valence titanium oxide powder and a zinc oxide powder or a zinc hydroxide powder, or a zinc titanate compound powder, and having a proportion of the number of titanium atoms to the total number of metal atoms of >2% and ≤10%, and includes discharge plasma sintering in vacuum or in an inert atmosphere at ≥700°C and ≤1,200°C.