Title:
シリコン単結晶ウェーハの導電型及び抵抗率の測定方法、及びシリコン単結晶ウェーハの製造方法
Document Type and Number:
Japanese Patent JP5338326
Kind Code:
B2
Inventors:
Toru Ishitsuka
Yagasaki Yoshinori
Nobuhiko Noto
Yagasaki Yoshinori
Nobuhiko Noto
Application Number:
JP2009006542A
Publication Date:
November 13, 2013
Filing Date:
January 15, 2009
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/66
Domestic Patent References:
| JP200613102A | ||||
| JP200276080A | ||||
| JP5543880A | ||||
| JP200068343A |
Attorney, Agent or Firm:
Mikio Yoshimiya