Title:
METHOD FOR PRODUCING BN CRUCIBLE
Document Type and Number:
Japanese Patent JP2010105853
Kind Code:
A
Abstract:
To provide a method for inexpensively producing a BN crucible, which is used for growing a GaAs single crystal or the like.
The method for producing the BN crucible comprises a step of heat-treating a polymer film in an atmosphere containing boron and nitrogen to convert the boron and the nitrogen into boron nitride (BN), further concretely, comprises: a first step of treating the polymer film at 1,200-2,000C in the atmosphere containing boron and nitrogen to produce an intermediate composed of boron and nitrogen on the surface portion of the polymer film at the least; and a second step of normally firing the obtained intermediate within 2,000-3,000C to obtain the BN crucible.
Inventors:
KAWAI CHIHIRO
Application Number:
JP2008279736A
Publication Date:
May 13, 2010
Filing Date:
October 30, 2008
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B15/10; C04B35/583; F27B14/10
Attorney, Agent or Firm:
Masami Sakai
Norio Kagami
Jun Komatsu
Norio Kagami
Jun Komatsu
Previous Patent: METHOD OF PRODUCING HIGH STRENGTH ZEOLITE BEAD MOLDED BODY
Next Patent: METHOD FOR PROCESSING COAL ASH
Next Patent: METHOD FOR PROCESSING COAL ASH