To suppress mixing of air bubbles into a sapphire single crystal when the sapphire single crystal is grown from the melt of aluminum oxide.

The method for producing a sapphire single crystal includes: a melting process for obtaining an alumina melt by melting aluminum oxide in a crucible placed in a chamber; a shoulder part forming process forming a shoulder part below a seed crystal by pulling the seed crystal brought into contact with the alumina melt; and a straight body part forming process for forming a straight body part by pulling a sapphire single crystal from the melt while supplying a mixed gas containing oxygen and an inert gas, wherein concentration of oxygen gas is set to be 0.6-3.0 vol.%, into the chamber.

COPYRIGHT: (C)2010,JPO&INPIT