Title:
METHOD FOR PRODUCING SILICON CARBIDE SINTERED COMPACT
Document Type and Number:
Japanese Patent JP2009256115
Kind Code:
A
Abstract:
To provide a silicon carbide sintered compact which ensures less variation in volume resistance and has stable electric conductivity and a method for producing the same.
The method for producing a silicon carbide sintered compact includes sintering mixed powder containing silicon carbide powder and a nonmetallic sintering aid at high temperature and high pressure, wherein 6-16 pts.mass of the nonmetallic sintering aid and 0.1-1.0 pt.mass of a nitrogen source-containing compound are added to 100 pts.mass of the silicon carbide powder.
Inventors:
MIYANO MARI
Application Number:
JP2008104008A
Publication Date:
November 05, 2009
Filing Date:
April 11, 2008
Export Citation:
Assignee:
BRIDGESTONE CORP
International Classes:
C04B35/565
Domestic Patent References:
| JPH1179841A | 1999-03-23 | |||
| JPH1179840A | 1999-03-23 | |||
| JP2008063197A | 2008-03-21 | |||
| JP2007320787A | 2007-12-13 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu