Title:
METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE
Document Type and Number:
Japanese Patent JP2022096221
Kind Code:
A
Abstract:
To provide a method for producing a silicon carbide substrate that is less prone to generate defects.SOLUTION: A method for producing a silicon carbide substrate includes the step (S10) for preparing a silicon carbide substrate having a surface with the total density of deposition of sodium, magnesium, aluminum, potassium, and calcium being less than 1×1012 atoms/cm2 and the step (S20) for polishing the surface of the silicon carbide substrate by chemical mechanical polishing.SELECTED DRAWING: Figure 1
Inventors:
OKITA KYOKO
Application Number:
JP2020209204A
Publication Date:
June 29, 2022
Filing Date:
December 17, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; C30B33/10; H01L21/304
Attorney, Agent or Firm:
Fukami patent office