To provide a reference voltage generating circuit of a semiconductor integrated circuit using MOSFETs which do not affect a reference voltage due to fluctuations of a power supply voltage and temperatures.
A band-gap reference voltage generating circuit is constituted by a current mirror circuit 4 which has first, second and third current paths 1, 2, 3 structured by P channel MOSFETs and sets the second current path as a bias step, an N channel MOSFET which operates in a sub-threshold region connected to the first current path 1, the N channel MOSFET and a resistance element which operate in the sub-threshold region connected to the second current path 2, and the resistance element and a p-n junction diode connected to the third current path 3. In the MOS type reference voltage generating circuit, a drain-to-source voltage correcting N channel MOSFET is connected between the P channel MOSFET and the N channel MOSFET in the second current path 2.
MATSUDA TOSHIHIRO
NAKAJIMA SHIGEKI
IHARA TAKASHI
YAMAMOTO SHINYA
SHIKINO HIGHTECH KK
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