Title:
PRODUCTION OF SOLID-STATE IMAGE PICKUP
Document Type and Number:
Japanese Patent JPH0669488
Kind Code:
A
Abstract:
PURPOSE: To prevent the decrease in Vth of transfer gate in a CCD solid-state image pickup and the dispersion in wafer surface.
CONSTITUTION: In such a construction where gate electrodes 106 are provided with CVD-SiO2 films 107, N-type impurities are prevented from being implanted into transfer gate parts 109, thereby preventing the decrease in Vth of the parts 109 and the dispersion in wafer surface.
Inventors:
IWAWAKI NAOKI
Application Number:
JP21924292A
Publication Date:
March 11, 1994
Filing Date:
August 18, 1992
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L27/148; (IPC1-7): H01L27/148
Attorney, Agent or Firm:
Umeda Masaru
Next Patent: PHOTOELECTRIC INTEGRATED CIRCUIT