PURPOSE: To make it possible to separate light-emitting and light-receiving elements so as to form individual islands electrically separated each other and composed of semiconductor crystal layer on the same board, and to realize the diversification and the expansion of applicable range of optoelectronic integrated circuit.
CONSTITUTION: Island 3 and 4 composed of silicon crystal layer are formed on a silicon board 1 with an insulation layer 2 composed of SiO2, etc., in between, and a light emitting element is formed on the island 3 and a light receiving element on the island 4, respectively. In such a step, the light emitting element is formed as a p-n-p bipolar transistor consisting of a collector 31, base 32 and emitter 33, and the light receiving element is formed as a p-n joint diode consisting of an n-type layer 41 and a p-type area 42. In addition, the facing faces of the islands 3 and 4 are positioned so as to be parallel each other so that the light emitted through base and collector joint of the bipolar transistor may enter the p-n joint diode. Further, an impurity diffusion area 5, etc., constituting the transistor for amplifying the output of light receiving element are formed in the island 4.
MONMA YOSHINOBU
YAMAUCHI TSUNENORI
MIURA TAKAO
