NANO IMPRINTING STAMP MADE OF MICROCAST SILICON CARBIDE

Title:

NANO IMPRINTING STAMP MADE OF MICROCAST SILICON CARBIDE

Document Type and Number:

Japanese Patent JP2004160647

Kind Code:

A

Abstract:

To provide a nano imprinting stamp made of microcast silicon carbide that is resistant to wearing.

A basic layer 11 and a plurality of micro patterns 12 connected to the basic layer 11 are formed by the microcasting method. The basic layer 11 and the micro patterns 12 are a complete single piece and the total body is made of silicon carbide (SiC) that is harder than simple silicon. As a result, a nano imprinting stamp 10 made of microcast silicon carbide is resistant to wearing and damage for several times of imprinting processes and has a longer service life. Owing to this longer service life, the production cost is recovered for a period exceeding a service life. Therefore, the economical efficiency of the nano imprinting stamp made of microcast silicon carbide is high.

Inventors:

LEE HEON
JUNG GUN-YOUNG

Application Number:

JP2003364007A

Publication Date:

June 10, 2004

Filing Date:

October 24, 2003

Export Citation:

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Assignee:

HEWLETT PACKARD DEVELOPMENT CO

International Classes:

B82B3/00; B81B1/00; B81C1/00; C04B35/565; H01L21/027; H05K3/12; (IPC1-7): B82B3/00; B81B1/00; C04B35/565; H01L21/027

Domestic Patent References:

JPH08175099A	1996-07-09
JP2001256644A	2001-09-21
JP2000153630A	2000-06-06
JP2002230847A	2002-08-16
JPH10133223A	1998-05-22

Foreign References:

US6309580B1	2001-10-30
US3973495A	1976-08-10
WO2001039986A1	2001-06-07

Attorney, Agent or Firm:

Satoshi Furuya
Takahiko Mizobe
Kiyoharu Nishiyama

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