NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Title:

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JP2004080051

Kind Code:

A

Abstract:

To provide a nonvolatile semiconductor memory device capable of forming each element uniformly without fail.

Element isolation is carried out by sequentially forming on a substrate 10 a gate oxide film, not shown, for constuting a word line 106, a floating gate 12, an intergate insulating film 14, a control gate 16, a first insulating film 100, and a second insulating film 102. The first insulating film 100 is formed of a silicon oxide film having a thickness of 500 or less, and the second insulating film 102 is formed of a silicon nitride film having a thickness of 2,000 or less. By means of the first and the second the insulating films 100 and 102, it is possible to suppress the reflectance of light equal to or less than 40%, with which the surface of the word line 106 is irradiated during photolithography processing. Therefore, a resist pattern 108 can be formed uniformly.

Inventors:

KAWAZU YOSHIYUKI

Application Number:

JP2003374333A

Publication Date:

March 11, 2004

Filing Date:

November 04, 2003

Export Citation:

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Assignee:

OKI ELECTRIC IND CO LTD

International Classes:

H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Miaki Kametani
Tetsuo Kanamoto
Koji Hagiwara

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