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Title:
NONVOLATILE SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JPH07161196
Kind Code:
A
Abstract:

PURPOSE: To obtain a nonvolatile semiconductor memory in which an excess generated in production of a mask programable ROM for storing inherent data for a first customer is delivered as a product sample without leaking the data to a second customer.

CONSTITUTION: Data which is not inherent to a customer and formed arbitrarily at a memory maker side is stored in a redundant memory cell array 16. Only the cell of the array 16 is selected by melting a fuse of a fuse circuit 15. In this case, selection of the cell of a memory cell array 2 for storing the data at this time is inactivated to read only data formed arbitrary by the maker side from the array 2. A power source voltage is set to 5V, a higher voltage by about 5-7V than that is applied to a chip enable signal input terminal 11 and an output enable input terminal 10 to melt the fuse of the circuit 15.


Inventors:
NISHIMURA YOSHITO
NAKAMURA MINORU
Application Number:
JP30308393A
Publication Date:
June 23, 1995
Filing Date:
December 02, 1993
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C17/00; G11C17/14; (IPC1-7): G11C17/14; G11C17/00
Attorney, Agent or Firm:
Hiroaki Tazawa (1 person outside)