PURPOSE: To enable easy high concentration addition of C to a GaAs base layer by making an interior of a reaction furnace approximately a normal pressure, by making an average flow rate of raw gas a specified value or more by making a supply amount ratio between group V raw material and group III raw material one or less and by heating a substrate surface to a specified temperature or lower.
CONSTITUTION: A substrate 10 is mounted on a susceptor 11 and carrier gas wherein raw gas is mixed from a transverse direction of a reaction tube 12 is made to flow to form gas flow 13 which is approximately parallel with a substrate surface on the substrate surface, and the substrate 10 is heated by an external RF coil 14. Thereby, a compound semiconductor thin film is formed on the substrate. Gas flow and a substrate surface are approximately parallel; therefore, if an average flow rate of gas is 15cm/second or more, gas convection can be restrained, and temperature rise of gas can be thereby restrained even if an interior of the reaction tube is not decompressed. Furthermore, supply amount ratio between hydride which is group V raw material and group III raw material is limited as to one or less and a heating temperature of the substrate is limited low as 500°C; thereby, it is possible to add C to a III-V compound semiconductor at fully high concentration.
TANAKA SHUICHI
SHIINA TAIICHI
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