PURPOSE: To make not only the space between surface of wafers and in-plane film thickness of the wafer but also the film quality thereof uniform by introducing treatment gas from a plurality of supply tubes into an inside of a reaction container to enable control of treatment gas supply amount for each thereof and by enabling rotation of the wafer.
CONSTITUTION: A boat 4 for thermal treatment is provided inside a reaction container 1 and a plurality of treatment objects such as semiconductor wafers 5 are laminated and contained in a vertical direction. A first gas supply tube 18 is made to pass through one side part of a manifold 11, and a second gas supply tube 19 is constituted to supply gas to a lower part of the boat 4. The first gas supply tube 18 is connected to a first gas source 27 through a mass flow controller 26 and a valve VB1 which adjust gas flow rate, and the second gas supply tube 19 is connected to a second gas source 32 through a mass flow controller 31 and a valve VB2. A heat insulating tube 46 is provided to an upper surface of a turn table 45, and a rotation mechanism 47 for rotating a rotation axis 44 at a specified velocity is connected to a lower end part thereof.
| JP2006080101 | SEMICONDUCTOR MANUFACTURING DEVICE |
| JPH03278520 | LASER CVD APPARATUS |
TAGO KENJI
SHIGEMATSU NOBUAKI
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