Title:
OXIDE-BONDED SILICON CARBIDE-BASED SINTERED COMPACT AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2008174425
Kind Code:
A
Abstract:
To provide an oxide-bonded silicon carbide-based sintered compact having excellent creep resistance and thermal shock resistance, free from firing crack or firing warpage and manufactured at a firing temperature lower than that in a conventional sintered compact and a method of manufacturing the same.
The oxide-bonded silicon carbide-based sintered compact consists essentially of silicon carbide, comprises aggregate particles substantially comprising silicon carbide and a bonded part containing silicon dioxide bonding the aggregate and has a porous structure. The bonded part has a crystal phase of silicon dioxide as a main phase and contains NaV6O15 and V2O4 in a state of a crystal phase of NaV6O15 and a crystal phase of V2O4.
Inventors:
KOMIYAMA TSUNEO
HORI SEIICHI
NAKANISHI YASUHISA
HORI SEIICHI
NAKANISHI YASUHISA
Application Number:
JP2007010507A
Publication Date:
July 31, 2008
Filing Date:
January 19, 2007
Export Citation:
Assignee:
NGK INSULATORS LTD
NGK ADREC CO LTD
NGK ADREC CO LTD
International Classes:
C04B35/565; C04B38/00
Domestic Patent References:
| JPH06191944A | 1994-07-12 | |||
| JPH08178548A | 1996-07-12 | |||
| JPH06191944A | 1994-07-12 |
Attorney, Agent or Firm:
Ippei Watanabe