Title:
PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS59211231
Kind Code:
A
Abstract:
PURPOSE:To form the resist pattern of multilayer structure accurately without defects by use of the same-type resist by forming the second resist pattern after modifying a surface of the first resist by a surface treating solution to improve the adhesive properties. CONSTITUTION:A semiconductor substrate 1 is covered with an insulating film or a film to be etched such as polycrystalline Si to form a pattern 3 of the first positive resist. A polycrystalline Si pattern 2a is formed by irradiation with CF4 plasma 4 followed by the heat treatment in an temperature atmosphere of the softening point of the resist or more to cure said resist. A surface fluorine altered layer 3a is subjected to a spin-on treatment, e.g. with a thinner solvent of the first positive resist, ethyl cellosolve xylene and a surface modified layer 3d is formed. The substrate is coated with the second positive resist to form a pattern 5b. As the positive resist surface 3d has been modified, the second positive resist can be spread with high uniformity.
Inventors:
SASAGO MASARU
KIKUCHI KAZUYA
KIKUCHI KAZUYA
Application Number:
JP8613283A
Publication Date:
November 30, 1984
Filing Date:
May 16, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/306; H01L21/302; H01L21/3065; (IPC1-7): H01L21/306
Domestic Patent References:
| JPS5311845A | 1978-02-02 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
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