Title:
FABRICATION OF METAL LAYER PATTERN IN SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59211232
Kind Code:
A
Abstract:
PURPOSE:To eliminate the possibility that a pattern comes in contact with the adjacent pattern by removing the second photoresist film, the metallic film and the first photoresist film respectively in order to remove unnecessary parts of the metallic film completely. CONSTITUTION:A metallic film 4 is formed over the whole surface of the semiconductor substrate 1 including the inside of an opening of the first photoresist film 2 and a plated metal layer 8 is formed using the second photoresist film 7 as a mask. The second photoresist film 7 is removed by reactive ion etching, plasma etching and so on. The first photoresist film 2 is not etched because the metallic film 4 works as a mask. Next, unnecessary parts of the metallic film 4 is removed by chemical etching using a plated metal film 8 as a mask. Lastly, the first photoresist film 2 is removed by a resist stripping liquid to complete the plated metal layer pattern 8 in which the unnecessary parts of the metallic film 4 is completely removed.
Inventors:
SASAKI YOSHINOBU
Application Number:
JP8680283A
Publication Date:
November 30, 1984
Filing Date:
May 16, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/288; H01L21/302; H01L21/3065; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Masuo Oiwa