Title:
PHASE SHIFTING MASK FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE MASK
Document Type and Number:
Japanese Patent JP2002287326
Kind Code:
A
Abstract:
To provide a phase shifting mask for manufacturing a semiconductor device and to provide a method for manufacturing the mask.
The phase shifting mask comprises a transparent substrate 100, a main pattern 130a composed of a first phase shifting layer 110a formed on the transparent substrate 100 and having first optical transmittance greater than 0, and at least one assistant pattern 140 which is formed around the main pattern 130a on the transparent substrate for phase-shifting by the same degree as the main pattern 130a but is not transferred to a wafer during exposure, and which is less than the first optical transmittance.
Inventors:
KIN JINSEI
RI JUGEN
JUNG SUNG-GON
RI JUGEN
JUNG SUNG-GON
Application Number:
JP2002000863A
Publication Date:
October 03, 2002
Filing Date:
January 07, 2002
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
G03F1/00; G03F1/29; G03F1/32; G03F1/36; G03F1/54; G03F1/68; G03F1/70; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Attorney, Agent or Firm:
Mikio Hatta (4 outside)
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