To form a densely arranged hole pattern having a hole pitch smaller than the resolution limit with an isolated hole pattern while preventing decrease in the throughput or degradation in the dimensional accuracy.

A plurality of holes arranged along the x-direction and the y-direction in the densely arranged hole pattern are divided into a first group and a second group in such a manner that the pitches in the respective directions of the holes in each group are controlled to P2x and P2y which are equal to twice of the minimum pitches P1x and P1y in the respective directions. First and second halftone phase shifting masks 10, 20 having light transmitting parts 12, 22 for holes corresponding to the above holes of the respective groups are used to expose one resist film twice for patterning. Barrier enhancing parts 13, 23 are formed in the first and second halftone phase shifting masks 10, 20, respectively, in the region corresponding to the light transmitting part of the other mask.