Title:
PHASE VARIATION MEMORY HAVING STEPWISE PROGRAMMING CHARACTERISTIC
Document Type and Number:
Japanese Patent JP2008103677
Kind Code:
A
Abstract:
To provide a technology for forming a phase variation memory having stepwise programming characteristics and for forming a phase variation memory with high density.
A memory cell has a first electrode 202, a second electrode 206, and a phase variation material 204 sandwiched between the first electrode 202 and the second electrode 206. The phase variation material 204 has stepwise programming characteristics.
Inventors:
HAPP THOMAS
PHILIPP JAN BORIS
PHILIPP JAN BORIS
Application Number:
JP2007187004A
Publication Date:
May 01, 2008
Filing Date:
July 18, 2007
Export Citation:
Assignee:
QIMONDA NORTH AMERICA CORP
International Classes:
H01L27/105; H01L45/00
Domestic Patent References:
| JP2003303941A | 2003-10-24 | |||
| JP2005012186A | 2005-01-13 | |||
| JP2006295168A | 2006-10-26 |
Foreign References:
| US20050112896A1 | 2005-05-26 |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office