To overcome problems such that, in a prior art, an electron beam source is not less than about 1 μm, and for application to an electron microscope, etc., emission current quantity is increased to raise luminance or the reduction ratio of an electron optical system is increased.
The device enables obtaining an electron source emitting electron with a high-brightness light source of a submicron size by a voltage applied between GaAs chip 10 and an extraction electrode 13, which former is excited by a light source 1 from which light beam is irradiated to a light irradiating region 41 and sent into an electron emitting part 44 of a submicron size through a structure for narrowing down an irradiation region like a light mask 42, and a near-field light which is generated there.
SHINADA HIROYUKI
TODOKORO HIDEO
FUKUHARA SATORU
